v rrm = 100 v - 600 v i f = 85 a features ? high surge capability do-5 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol fr85b(r)02 f r85d(r)02 fr85g(r)02 unit repetitive peak reverse voltage v rrm 100 200 400 v rms reverse voltage v rms 70 140 280 v fr85j(r)02 600 420 FR85B02 thru fr85jr02 maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions silicon fast recover y diode ? types from 100 v to 600 v v rrm 2. reverse polarity (r): stud is anode. dc blocking voltage v dc 100 200 400 v continuous forward current i f 85 85 85 a operating temperature t j -55 to 150 -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 -55 to 150 c parameter symbol fr85b(r)02 f r85d(r)02 fr85g(r)02 unit diode forward voltage 1.3 1.3 1.3 25 25 25 a 20 20 20 ma recovery time maximum reverse recovery time t rr 200 200 200 ns 1.3 600 85 1369 i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 100 v, t j = 125 c v 25 20 250 a 1369 -55 to 150 -55 to 150 fr85j(r)02 v r = 100 v, t j = 25 c i f = 85 a, t j = 25 c t c 100 c conditions 1369 1369 t c = 25 c, t p = 8.3 ms electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 1
FR85B02 thru fr85jr02 www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. FR85B02 thru fr85jr02 do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/fast-recovery-rectifiers/ 3
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